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| SMD Type HEXFET Power MOSFET KRF7350 IC IC Features Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current Ta = 25 Continuous Drain Current Ta = 70 Pulsed Drain Current *1 Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy *4 Peak Diode Recovery dv/dt *2 Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 Junction-to-Drain Lead VGS EAS dv/dt TJ, TSTG R R JA JL Symbol VDS ID ID IDM N-Channel 100 2.1 1.7 8.4 2.0 0.016 20 35 4.0 P-Channel -100 -1.5 -1.2 -6.0 Unit V A @Ta= 25 PD W W/ V 51 4.3 mJ V/ns -55 to + 150 62.5 20 /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Pulse width 400 s; duty cycle 2%. *3 Surface mounted on 1 in square Cu board *4 N channel: Starting TJ = 25 , L = 4.0mH, RG = 25 , IAS = 4.2A P channel: Starting TJ = 25 , L = 11mH, RG = 25 , IAS = -3.0A www.kexin.com.cn 1 SMD Type KRF7350 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A VGS = 0V, ID = -250 A ID = 1mA,Reference to 25 ID = -1mA,Reference to 25 VGS = 10V, ID = 2.1A*1 VGS = -10V, ID = -1.5A*1 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A VDS = 50V, ID = 2.1A*1 VDS = -50V, ID = -1.5A*1 VDS = 100V, VGS = 0V VDS = -100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 70 VDS = -80V, VGS = 0V, TJ = 70 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel ID = -1.5A,VDS = -80V,VGS = -10V N-Channel VDD = 50V,ID = 1.A,RG = 22 RD=50 ,VGS = 10V P-Channel VDD = -50V,ID = -1.0A,RG = 22 RD=50 ,VGS = -10V P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel VGS = 0V,VDS = 25V,f = 1.0MHz P-Channel VGS = 0V,VDS = -25V,f = 1.0MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min 100 -100 Typ Max Unit V 0.12 -0.11 0.21 0.48 2.0 -2.0 2.4 1.1 25 -25 250 -250 100 100 19 21 3.0 3.4 8.8 10 6.7 25 11 13 35 30 20 40 380 360 100 110 54 65 28 31 4.5 5.1 13 16 4.0 -4.0 TJ RDS(on) VGS(th) gfs V/ V S Drain-to-Source Leakage Current IDSS A Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS = 20V nA N-Channel ID =2.1A,VDS = 80V,VGS =10V nC ns pF 2 www.kexin.com.cn SMD Type KRF7350 Electrical Characteristics Ta = 25 Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300 s; duty cycle 2%. Body Diode) Symbol IS ISM VSD trr Qrr TJ = 25 , IS = 1.8A, VGS = 0V*1 TJ = 25 , IS = -1.4A, VGS = 0V*1 N-Channel TJ = 25 , IF =1.8A,di/dt = 100A/ P-Channel TJ=25 ,IF=-1.4A,di/dt=-100A/ s*1 s*1 Testconditons N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 72 77 205 240 Min Typ Max 1.8 -1.4 8.4 -6.0 1.3 -1.6 110 120 310 360 IC IC Unit A Body Diode) *2 V ns nC *2 Repetitive rating; pulse width limited by max. junction temperature. www.kexin.com.cn 3 |
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